-
1 refractory gate
Электроника: затвор из тугоплавкого металла -
2 refractory gate
-
3 refractory gate
The New English-Russian Dictionary of Radio-electronics > refractory gate
-
4 refractory gate
-
5 refractory (gate) MOS
Вычислительная техника: МОП-структура с высокой термостойкостью -
6 refractory gate MOS
-
7 gate
1) логический элемент, ЛЭ; (логическая) схема; проф. вентиль; шлюз || управлять (напр. работой устройства) с помощью логических элементов или логических схем; использовать логические элементы или логические схемы2) селекторный импульс, стробирующий импульс, строб-импульс || осуществлять селекцию во времени; стробировать4) затвор (напр. полевого транзистора)5) пп управляющий электрод (напр. тиристора)•to gate in — вводить ( сигнал)
to gate out — выделять ( сигнал)
- gate A20- alternative denial gate
- amplitude gate
- AND gate
- AND-INVERT gate
- AND-NOT gate
- anode gate
- back gate
- biconditional gate
- binary-logic gate
- bottom gate
- burst gate
- call gate
- capacitor-resistor-diode gate
- cathode gate
- clocked gate
- CML gate
- coincidence gate
- complement gate
- conjunction gate
- control gate
- CRD gate
- current-field-access swap gate
- current-mode gate
- current-mode logic gate
- difference gate
- diode gate
- diode-transistor logic gate
- discrete gate
- disjunction gate
- dispersion gate
- diversity gate
- DTL gate
- dual gate
- EITHER-OR gate
- emitter-coupled gate
- enabling gate
- equality gate
- equivalence gate
- equivalent gate
- except gate
- exclusive NOR gate
- exclusive OR gate
- fault-free gate
- faulty gate
- ferroelectric light gate
- film gate
- floating gate
- flux gate
- GaAs logic gate
- guard gate
- IC logic gate
- identity gate
- if-A-then-NOT-B gate
- I2L gate
- in gate
- inclusive NOR gate
- inclusive OR gate
- indicator gate
- information gate
- inhibition gate
- input gate
- insulated gate
- integrated injection logic gate
- interrupt gate
- inverting logic gate
- joint denial gate
- Josephson logic gate
- Josephson-junction logic gate
- junction gate
- latching Boolean gate
- logic gate
- logical gate
- magnetic gate
- majority gate
- match gate
- meshed gate
- metal gate
- metal-oxide-semiconductor gate
- mix gate
- molibdenum gate
- MOS gate
- multiemitter gate
- multiple-level gate
- multiple-level logic gate
- NAND gate
- n-channel silicon gate
- negation gate
- negative AND -gate
- negative OR gate
- negative unate gate
- NEITHER-NOR gate
- N-input gate
- nitride gate
- NMOS silicon gate
- noise gate
- nonconjunction gate
- nondisjunction gate
- nonequality gate
- nonequivalence gate
- nonunate gate
- NOR gate
- NOT gate
- NOT-AND gate
- one-nanosecond gate
- opaque gate
- optical gate
- OR gate
- OTHER-OR gate
- out gate
- outer gate
- overlapping gates
- p-channel silicon gate
- PMOS silicon gate
- p-n junction gate
- polysilicon gate
- positive unate gate
- primitive logic gate
- pulse gate
- range gate
- readout gate
- refractory gate
- replicate gate
- resistive insulated gate
- resistively connected gates
- resistor-transistor logic gate
- RTL gate
- sampling gate
- scan gate
- sealed gate
- searching gate
- self-aligned gate
- self-registered gate
- Shottky gate
- Shottky-barrier gate
- silicon gate
- stacked gate
- stated gate
- stateful gate
- stateless gate
- storage gate
- substrate gate
- swap gate
- synchronous gate
- task gate
- threshold gate
- thyratron gate
- time gate
- T2L gate
- top gate
- transfer gate
- transistor-transistor logic gate
- trap gate
- TTL gate
- tunneling cryotron gate
- variable-threshold gate
- V-groove MOS gate
- video gate
- VMOS gate
- write gate
- XNOR gate
- XOR gate
- zero-match gate -
8 gate
1) логический элемент, ЛЭ; (логическая) схема; проф. вентиль; шлюз || управлять (напр. работой устройства) с помощью логических элементов или логических схем; использовать логические элементы или логические схемы2) селекторный импульс, стробирующий импульс, строб-импульс || осуществлять селекцию во времени; стробировать4) затвор (напр. полевого транзистора)5) пп. управляющий электрод (напр. тиристора)•to gate in — вводить ( сигнал)
- amplitude gateto gate out — выделять ( сигнал), to gate through пропускать ( сигнал)
- AND gate
- AND-INVERT gate
- AND-NOT gate
- anode gate
- back gate
- biconditional gate
- binary-logic gate
- bottom gate
- burst gate
- call gate
- capacitor-resistor-diode gate
- cathode gate
- clocked gate
- CML gate
- coincidence gate
- complement gate
- conjunction gate
- control gate
- CRD gate
- current-field-access swap gate
- current-mode gate
- current-mode logic gate
- difference gate
- diode gate
- diode-transistor logic gate
- discrete gate
- disjunction gate
- dispersion gate
- diversity gate
- DTL gate
- dual gate
- EITHER-OR gate
- emitter-coupled gate
- enabling gate
- equality gate
- equivalence gate
- equivalent gate
- except gate
- exclusive NOR gate
- exclusive OR gate
- fault-free gate
- faulty gate
- ferroelectric light gate
- film gate
- floating gate
- flux gate
- GaAs logic gate
- gate A20
- guard gate
- I2L gate
- IC logic gate
- identity gate
- if-A-then-NOT-B gate
- in gate
- inclusive NOR gate
- inclusive OR gate
- indicator gate
- information gate
- inhibition gate
- input gate
- insulated gate
- integrated injection logic gate
- interrupt gate
- inverting logic gate
- joint denial gate
- Josephson logic gate
- Josephson-junction logic gate
- junction gate
- latching Boolean gate
- logic gate
- logical gate
- magnetic gate
- majority gate
- match gate
- meshed gate
- metal gate
- metal-oxide-semiconductor gate
- mix gate
- molibdenum gate
- MOS gate
- multiemitter gate
- multiple-level gate
- multiple-level logic gate
- NAND gate
- n-channel silicon gate
- negation gate
- negative AND-gate
- negative OR gate
- negative unate gate
- NEITHER-NOR gate
- N-input gate
- nitride gate
- NMOS silicon gate
- noise gate
- nonconjunction gate
- nondisjunction gate
- nonequality gate
- nonequivalence gate
- nonunate gate
- NOR gate
- NOT gate
- NOT-AND gate
- one-nanosecond gate
- opaque gate
- optical gate
- OR gate
- OTHER-OR gate
- out gate
- outer gate
- overlapping gates
- p-channel silicon gate
- PMOS silicon gate
- p-n junction gate
- polysilicon gate
- positive unate gate
- primitive logic gate
- pulse gate
- range gate
- readout gate
- refractory gate
- replicate gate
- resistive insulated gate
- resistively connected gates
- resistor-transistor logic gate
- RTL gate
- sampling gate
- scan gate
- sealed gate
- searching gate
- self-aligned gate
- self-registered gate
- Shottky gate
- Shottky-barrier gate
- silicon gate
- stacked gate
- stated gate
- stateful gate
- stateless gate
- storage gate
- substrate gate
- swap gate
- synchronous gate
- T2L gate
- task gate
- threshold gate
- thyratron gate
- time gate
- top gate
- transfer gate
- transistor-transistor logic gate
- trap gate
- TTL gate
- tunneling cryotron gate
- variable-threshold gate
- V-groove MOS gate
- video gate
- VMOS gate
- write gate
- XNOR gate
- XOR gate
- zero-match gateThe New English-Russian Dictionary of Radio-electronics > gate
-
9 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
10 refractory MOS
1) Техника: МОП-структура с высокой термостойкостью, МОП-структура с тугоплавкими электродами затвора2) Вычислительная техника: (gate) МОП-структура с высокой термостойкостью3) Микроэлектроника: МОП-структура с затвором из тугоплавкого металла -
11 refractory-metal gate
Микроэлектроника: затвор из тугоплавкого металла -
12 refractory-metal gate
затвор з тугоплавкого металуEnglish-Ukrainian dictionary of microelectronics > refractory-metal gate
-
13 refractory-metal gate
English-Russian dictionary of microelectronics > refractory-metal gate
-
14 RMOS
refractory metal-oxide-semiconductor; refractory gate MOS; refractory MOS - МОП-структура с высокой термостойкостью; МОП-структура с затвором из тугоплавкого металла -
15 RMOS
[refractory (gate) MOS] МОП-структура с высокой термостойкостью -
16 RMOS
2) Электроника: Refractory Metal- Oxide Semiconductor3) Вычислительная техника: refractory (gate) MOS, Realtime Multitasking Operating System (SNI, OS) -
17 RMOS
сокр. от refractory (gate) MOSEnglish-Russian dictionary of computer science and programming > RMOS
-
18 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
19 MOS
I сокр. от mean opinion score II сокр. от metal-oxide-semiconductorструктура (типа) металл - оксид - полупроводник, МОП-структура-
adjustable-threshold MOS
-
aluminum-gate MOS
-
back-gate MOS
-
beam-addressed MOS
-
bipolar MOS
-
bulk complementary MOS
-
buried channel MOS
-
buried-oxide MOS
-
clocked complementary MOS
-
complementary MOS
-
depletion MOS
-
dielectric insulated MOS
-
dielectric isolated MOS
-
diffusion self-aligned MOS
-
double polysilicon MOS
-
double poly MOS
-
double-diffused MOS
-
double-implanted MOS
-
dynamic complementary MOS
-
enhancement MOS
-
enhancement/depletion MOS
-
floating-gate avalanche injection MOS
-
floating-gate MOS
-
high-density MOS
-
high-performance complementery MOS
-
high-threshold MOS
-
high-voltage MOS
-
insulated gate MOS
-
ion-implanted MOS
-
isolated gate MOS
-
junction gate MOS
-
lateral planar MOS
-
local oxidation MOS
-
long MOS
-
low-threshold MOS
-
metal-gate MOS
-
micrometer MOS
-
micron MOS
-
n-channel MOS
-
p-channel MOS
-
polysilicon self-aligned MOS
-
poly self-aligned MOS
-
power MOS
-
quadruple self-aligned MOS
-
refractory MOS
-
resistive-gate MOS
-
scaled-down MOS
-
scaled MOS
-
Schottky-barrier MOS
-
self-aligned MOS
-
silicon-gate technology MOS
-
silicon-gate MOS
-
silicon-on-sapphire complementary MOS
-
stacked transistors complementary MOS
-
submicrometer MOS
-
submicron MOS
-
surface gate MOS
-
three-dimensional MOS
-
transverse MOS
-
triple-polysilicon MOS
-
triple-poly MOS
-
V-groove MOS
-
V MOS -
20 transistor
транзистор, полупроводниковый триод-
alloy-diffused transistor
-
alloyed transistor
-
alloy-junction transistor
-
annular transistor
- avalanche injection transistor -
avalanche transistor
-
bipolar junction transistor
-
bipolar MOS-field-effect transistor
-
bipolar transistor
-
bipolar-mode static induction transistor
-
buried-oxide MOS transistor
-
charge-flow transistor
-
chip transistor
-
coaxial transistor
-
common-base transistor
-
common-collector transistor
-
common-drain field-effect transistor
-
common-emitter transistor
-
common-gate field-effect transistor
-
common-source field-effect transistor
-
complementary transistors
-
composite transistor
-
Darlington transistor
-
depletion-mode field-effect transistor
-
diffused mesa transistor
-
diffused transistor
-
diffused-alloy transistor
-
discrete transistor
-
double-diffused MOS transistor
-
double-polysilicon MOS transistor
-
double-poly MOS transistor
-
drift transistor
-
dual transistor
-
dual-base transistor
-
emitter ballast transistor
-
enhancement-mode field-effect transistor
-
enzyme transistor
-
epitaxial transistor
-
evaporated transistor
-
field-controlled transistor
-
field-effect tetrode transistor
-
floating-gate avalanche-injection transistor
-
floating-gate field-effect transistor
-
fused transistor
-
gate-modulated bipolar transistor
-
germanium transistor
-
graded-base transistor
-
grounded-base transistor
-
ground-base transistor
-
grounded-collector transistor
-
ground-collector transistor
-
grounded-drain field-effect transistor
-
ground-drain field-effect transistor
-
grounded-emitter transistor
-
ground-emitter transistor
-
grounded-gate field-effect transistor
-
ground-gate field-effect transistor
-
grounded-source field-effect transistor
-
ground-source field-effect transistor
-
heterojunction transistor
-
high-electron-mobility transistor
-
high-frequency transistor
-
high-power transistor
-
high-voltage transistor
-
homojunction transistor
-
hot-electron transistor
-
insulated-gate field-effect transistor
-
integrated transistor
-
interdigital transistor
-
inverse transistor
-
inversely-operated transistor
-
inverted transistor
-
ion-implanted transistor
-
ion-selective transistor
-
junction transistor
-
junction-gate field-effecttransistor
-
junction field-effecttransistor
-
lateral transistor
-
light-activated transistor
-
long-channel field-effect transistor
-
low-frequency transistor
-
low-noise transistor
-
low-power transistor
-
low-voltage transistor
-
mesa transistor
-
mesh transistor
-
metal-gate field-effect transistor
-
metal-insulator-semiconductor transistor
-
metal-nitride-oxide-semiconductor transistor
-
metal-oxide-semiconductor transistor
-
metal-semiconductor field-effect transistor
-
microalloy transistor
-
microcircuit transistor
-
micropower transistor
-
microwave transistor
-
MIS field-effect transistor
-
MIS transistor
-
MNOS transistor
-
monolithic transistor
-
MOS transistor
-
multichannel field-effect transistor
-
multiple-collector transistor
-
multiple-emitter transistor
-
n-channel MOS transistor
-
n-p-n transistor
-
offset-gate field-effect transistor
-
optical transistor
-
parasitic transistor
-
p-channel MOS transistor
-
permeable-base transistor
-
photosensitive transistor
-
planar transistor
-
p-n-p transistor
-
point-contact transistor
-
point transistor
-
post-alloy-diffused transistor
-
power transistor
-
refractory MOS transistor
-
ring-base transistor
-
ring-emitter transistor
-
Schottky-barrier field-effect transistor
-
self-aligned-gate field-effect transistor
-
silicon transistor
-
silicon-gate MOS transistor
-
space-charge-limited transistor
-
stacked transistors
-
static-induction transistor
-
strip-base transistor
-
surface-alloy transistor
-
surface-barrier transistor
-
switching-type transistor
-
switching transistor
-
tandem transistor
-
test transistor
-
thick-film transistor
-
thin-film transistor
-
transverse transistor
-
tunnel transistor
-
unijunction transistor
-
unipolar transistor
-
V-groove MOS transistor
-
V MOS transistor
-
vertical transistor
- 1
- 2
См. также в других словарях:
refractory-metal gate MOS structure — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
Refractory-MOS-Struktur — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
refractory MOS — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
refractory-metal gate — sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory metal gate vok. Gate aus schwerschmelzendem Metall, n rus. затвор из тугоплавкого металла, m pranc. grille en métal réfractaire, f … Radioelektronikos terminų žodynas
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
Gate aus schwerschmelzendem Metall — sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory metal gate vok. Gate aus schwerschmelzendem Metall, n rus. затвор из тугоплавкого металла, m pranc. grille en métal réfractaire, f … Radioelektronikos terminų žodynas
MOS-Struktur mit dem Gate aus schwerschmelzendem Metall — MOP darinys su sunkialydžio metalo užtūra statusas T sritis radioelektronika atitikmenys: angl. refractory MOS; refractory metal gate MOS structure vok. MOS Struktur mit dem Gate aus schwerschmelzendem Metall, f; Refractory MOS Struktur, f rus.… … Radioelektronikos terminų žodynas
Float glass — is a sheet of glass made by floating molten glass on a bed of molten tin. This method gives the sheet uniform thickness and very flat surfaces. Modern windows are made from float glass. Most float glass is soda lime glass, but relatively minor… … Wikipedia
Naoki Yokoyama — Dr. Naoki Yokoyama (横山 直樹, Yokoyama Naoki?) (March 28, 1949 ) is a Japanese electrical engineer, active in the fields of nanotechnology and electronic and photonic devices, best known for his success in fabricating hot electron transistors and… … Wikipedia
metallurgy — metallurgic, metallurgical, adj. metallurgically, adv. metallurgist /met l err jist/ or, esp. Brit., /meuh tal euhr jist/, n. /met l err jee/ or, esp. Brit., /meuh tal euhr jee/, n. 1. the technique or science of working or heating metals so as… … Universalium
steel — steellike, adj. /steel/, n. 1. any of various modified forms of iron, artificially produced, having a carbon content less than that of pig iron and more than that of wrought iron, and having qualities of hardness, elasticity, and strength varying … Universalium
